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Intersubband gain without global inversion through dilute nitride band engineering
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10.1063/1.3552204
/content/aip/journal/apl/98/6/10.1063/1.3552204
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/6/10.1063/1.3552204
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Band structure (a) and corresponding occupation functions (b) assuming that all subbands have an electronic density of thermalized at 300 K. The convention is the same in both panels. The dotted, dashed, and dot-dashed are, respectively, for the subbands , , and . Local inversion in k-space is clearly seen.

Image of FIG. 2.
FIG. 2.

Conduction-band character (dots), nitrogen-character (dashed), and charge density (solid) for (top) and (bottom).

Image of FIG. 3.
FIG. 3.

Gain without global population inversion. In the dashed curve, the density for the , , and subbands is the same, . The curves below the dashed lines have a fixed density in the subband and from top to bottom, the (equal) density of subbands and increase by . The curves above the dashed line do not have global LWI and are here for a comparison. For those the (equal) and densities are fixed at and from bottom to top the density of the subband increases by . The same convention for curves holds for the insets.

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/content/aip/journal/apl/98/6/10.1063/1.3552204
2011-02-07
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Intersubband gain without global inversion through dilute nitride band engineering
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/6/10.1063/1.3552204
10.1063/1.3552204
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