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junction transition in InAs self-assembled quantum dot coupled with SQUID
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10.1063/1.3552715
/content/aip/journal/apl/98/6/10.1063/1.3552715
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/6/10.1063/1.3552715
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of the SQUID coupled with InAs SAQD. Here randomly distributed small dots are InAs SAQDs. For two junctions of Al/SAQD/Al marked as dotted square (J1 and J2), the enlarged images are shown in the right insets. (b) Schematic diagram of our device. (c) Differential conductance as functions of source-drain voltage and BG voltage under the magnetic field of 100 mT and at . (d) The characteristics of SQUID at about 30 mK and in an absence of magnetic field. Here was set to be −0.04 V and grounded.

Image of FIG. 2.
FIG. 2.

oscillation as a function of external magnetic field and . is fixed to be 0V for (a), −0.2 V for (b), and −0.4 V for (c). (d) is enlarged plot of (c) in the range of from −0.08 to −0.25 V. For clarity, line profiles of (blue) and (black) are superimposed with an arbitrary scale.

Image of FIG. 3.
FIG. 3.

profiles of individual junctions in SQUID with varying at fixed 0 V, (b) −0.2 V, and (c) −0.4 V.

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/content/aip/journal/apl/98/6/10.1063/1.3552715
2011-02-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: π junction transition in InAs self-assembled quantum dot coupled with SQUID
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/6/10.1063/1.3552715
10.1063/1.3552715
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