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Theory of quasiballistic transport through nanocrystalline silicon dots
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10.1063/1.3553501
/content/aip/journal/apl/98/6/10.1063/1.3553501
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/6/10.1063/1.3553501
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic illustration of the porous silicon surface-emitting diode. Electrons are emitted from the surface under positive bias . (b) Conduction band profile (dashed line) and electron distribution at the diode surface, . The energy loss, , is the energy difference between the substrate Fermi level and the peak energy of the electron distribution .

Image of FIG. 2.
FIG. 2.

(a) Energy levels of a nc-Si dot with a diameter of . (b) Density of states of the nc-Si dot (solid line) and bulk Si (dashed line). (c) Optical-phonon emission rate (vertical lines). The box shows an average over a 100 meV interval. Tunneling escape rate between neighboring nc dots is also plotted for comparison (dashed line).

Image of FIG. 3.
FIG. 3.

(a) An example of electron trajectories (dots), together with the potential profile (solid line). The inset shows the schematic illustration of the Monte Carlo simulation. (b) Electron distribution at the diode surface for a nc-Si dot array with and .

Image of FIG. 4.
FIG. 4.

(a) Energy loss, , as a function of applied voltage, , for a nc-Si dot array with and at . (b) Dot diameter dependence. (c) Oxide thickness dependence.

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/content/aip/journal/apl/98/6/10.1063/1.3553501
2011-02-07
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Theory of quasiballistic transport through nanocrystalline silicon dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/6/10.1063/1.3553501
10.1063/1.3553501
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