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(a) Schematic illustration of the porous silicon surface-emitting diode. Electrons are emitted from the surface under positive bias . (b) Conduction band profile (dashed line) and electron distribution at the diode surface, . The energy loss, , is the energy difference between the substrate Fermi level and the peak energy of the electron distribution .
(a) Energy levels of a nc-Si dot with a diameter of . (b) Density of states of the nc-Si dot (solid line) and bulk Si (dashed line). (c) Optical-phonon emission rate (vertical lines). The box shows an average over a 100 meV interval. Tunneling escape rate between neighboring nc dots is also plotted for comparison (dashed line).
(a) An example of electron trajectories (dots), together with the potential profile (solid line). The inset shows the schematic illustration of the Monte Carlo simulation. (b) Electron distribution at the diode surface for a nc-Si dot array with and .
(a) Energy loss, , as a function of applied voltage, , for a nc-Si dot array with and at . (b) Dot diameter dependence. (c) Oxide thickness dependence.
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