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Top view of the proposed EL device.
TEM graph of (a) the multilayer and (b) the side view of the proposed structure taken for a device with a gap spacing of . Poly-Si electrodes are deposited perpendicular to the multilayer for lateral current injection. The results reported in this paper are all based on the gap devices.
I-V characteristic of the EL device with the turn on voltage of .
EL spectra of a typical device under various current densities. The inset shows the integrated EL intensity as a function of the applied current.
PL spectra of as deposited and annealed sample. The intensity has increased more than four times after annealing.
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