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Electroluminescence from amorphous- multilayers using lateral carrier injection
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10.1063/1.3553778
/content/aip/journal/apl/98/6/10.1063/1.3553778
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/6/10.1063/1.3553778
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Top view of the proposed EL device.

Image of FIG. 2.
FIG. 2.

TEM graph of (a) the multilayer and (b) the side view of the proposed structure taken for a device with a gap spacing of . Poly-Si electrodes are deposited perpendicular to the multilayer for lateral current injection. The results reported in this paper are all based on the gap devices.

Image of FIG. 3.
FIG. 3.

I-V characteristic of the EL device with the turn on voltage of .

Image of FIG. 4.
FIG. 4.

EL spectra of a typical device under various current densities. The inset shows the integrated EL intensity as a function of the applied current.

Image of FIG. 5.
FIG. 5.

PL spectra of as deposited and annealed sample. The intensity has increased more than four times after annealing.

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/content/aip/journal/apl/98/6/10.1063/1.3553778
2011-02-08
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electroluminescence from amorphous-SiNx:H/SiO2 multilayers using lateral carrier injection
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/6/10.1063/1.3553778
10.1063/1.3553778
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