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Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)
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View: Figures


Image of FIG. 1.
FIG. 1.

SEM micrographs in (a) and (b) showing the cross-hatched pattern with square trenches etched into the GaN/AlN QD sample. Region A in (a), indicated with the dashed rectangle, is shown with higher magnification in (b). Region B in (a), indicated with a dashed square, corresponds to a rectangular region analyzed with AEI and CLWI in Fig. 3. CL polarization anisotropy ratio images, , are shown in (c) and (d) for sample temperatures of 300 and 46 K, respectively.

Image of FIG. 2.
FIG. 2.

Stack plots of CL spectra acquired with polarization detection orientations of [11−20] and [11−20] for the -beam focused at various positions, and , along the vertical and horizontal stripes shown in Fig. 1(b). The polarization anisotropy ratio, , is shown for each set of CL spectra acquired at the indicated and in (a) and (b), respectively.

Image of FIG. 3.
FIG. 3.

AEI and CLWI in (a) and (b), respectively. The images were acquired in the region denoted by the dashed square labeled B in the SEM image of Fig. 1(a). The mapping of and is shown with the gray and false color bars, respectively. A linescan analysis along the region marked with an arrow in (b) is shown in (c) for the QD lifetime and in (d) for , , and . The CLWI and linescan measurements were performed at .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective control of polarized emission from patterned GaN/AlN quantum dot ensembles on Si(111)