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The enhanced binding energy for biexcitons in InAs quantum dots
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10.1063/1.3554425
/content/aip/journal/apl/98/6/10.1063/1.3554425
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/6/10.1063/1.3554425
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Figures

Image of FIG. 1.
FIG. 1.

(a) PL spectrum of InAs quantum structures and laser spectrum used for the four-wave-mixing experiment. (b) Temporal change of four-wave-mixing field amplitude emitted from InAs QRDs. A wetting layer and QRDs are schematically shown in the inset.

Image of FIG. 2.
FIG. 2.

Biexciton binding energies observed in InAs/InP QRDs (●) and those observed in InAs/InP QDs (○; see Refs. 3, 11, and 12), InAs/InGaAs QDs (×; see Ref. 13), InAs/InGaAsP QDs (◇; see Ref. 14), InAs/GaAs QDs (◻; see Refs. 2 and 15), InAs/GaAs QDs (shade; see Ref. 4), and InGaAs/GaAs QDs (△; see Refs. 16–18).

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/content/aip/journal/apl/98/6/10.1063/1.3554425
2011-02-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The enhanced binding energy for biexcitons in InAs quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/6/10.1063/1.3554425
10.1063/1.3554425
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