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Organic semiconductor memory devices based on a low-band gap polyfluorene derivative with isoindigo as electron-trapping moieties
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1.A. J. Heeger, S. Kivelson, J. R. Schrieffer, and W. -P. Su, Rev. Mod. Phys. 60, 781 (1988).
2.V. Saxena and B. D. Malhotra, Curr. Appl. Phys. 3, 293 (2003).
3.Q. -D. Ling, D. -J. Liaw, C. Zhu, D. S. Chan, E. -T. Kang, and K. -G. Neoh, Prog. Polym. Sci. 33, 917 (2008).
4.J. C. Scott and L. D. Bozano, Adv. Mater. (Weinheim, Ger.) 19, 1452 (2007).
5.X. Xu, L. Li, G. Yu, C. Di, D. Wei, S. Ye, and Y. Liu, Appl. Phys. Lett. 92, 043302 (2008).
6.W. L. Leong, P. S. Lee, A. Lohani, Y. M. Lam, T. Chen, S. Zhang, A. Dodabalapur, and S. G. Mhaisalkar, Adv. Mater. (Weinheim, Ger.) 20, 2325 (2008).
7.F. Li, D. -I. Son, H. -M. Cha, S. -M. Seo, B. -J. Kim, H. -J. Kim, J. -H. Jung, and T. W. Kim, Appl. Phys. Lett. 90, 222109 (2007).
8.L. D. Bozano, B. W. Kean, M. Beinhoff, K. R. Carter, P. M. Rice, and J. C. Scott, Adv. Funct. Mater. 15, 1933 (2005).
9.C. Pearson, J. H. Ahn, M. F. Mabrook, D. A. Zeze, M. C. Petty, K. T. Kamtekar, C. Wang, M. R. Bryce, P. Dimitrakis, and D. Tsoukalas, Appl. Phys. Lett. 91, 123506 (2007).
10.C. Joo, S. O. Jeon, K. S. Yook, and J. Y. Lee, Synth. Met. 159, 1809 (2009).
11.Q. -D. Ling, Y. Song, S. -L. Lim, E. Y.-H. Teo, Y. -P. Tan, C. Zhu, D. S. H. Chan, D. -L. Kwong, E. -T. Kang, and K. -G. Neoh, Angew. Chem., Int. Ed. 45, 2947 (2006).
12.Y. Song, Q. D. Ling, C. Zhu, E. T. Kang, D. S. H. Chan, Y. H. Wang, and D. -L. Kwong, IEEE Electron Device Lett. 27, 154 (2006).
13.T. Ouisse and O. Stéphan, Org. Electron. 5, 251 (2004).
14.X. -D. Zhuang, Y. Chen, B. -X. Li, D. -G. Ma, B. Zhang, and Y. Li, Chem. Mater. 22, 4455 (2010).
15.B. Liu, Y. Zou, B. Peng, B. Zhao, K. Huang, Y. He, and C. Pan, “Low Bandgap Isoindigo-Based Copolymers: Design, Synthesis and Photovoltaic Applications,” Polym. Chem. (submitted).
16.S. Choi, S. -H. Hong, S. H. Cho, S. Park, S. -M. Park, O. Kim, and M. Ree, Adv. Mater. (Weinheim, Ger.) 20, 1766 (2008).
17.J. M. Zhao, S. T. Zhang, X. J. Wang, Y. Q. Zhan, X. Z. Wang, G. Y. Zhong, Z. J. Wang, X. M. Ding, W. Huang, and X. Y. Hou, Appl. Phys. Lett. 84, 2913 (2004).
18.J. G. Simmons and R. R. Verderber, Proc. R. Soc. London, Ser. A 301, 77 (1967).
19.R. Waser and M. Aono, Nature Mater. 6, 833 (2007).
20.M. Li, F. Zhuge, X. Zhu, K. Yin, J. Wang, Y. Liu, C. He, B. Chen, and R. -W. Li, Nanotechnology 21, 425202 (2010).

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Polyfluorene and its derivatives are good candidates to fabricate single-component polymer memories. However, the reported polyfluorenes for use in memories all have a big band gap and exhibit an absorption peak near the ultraviolet region. We report here organic memories based on a low-band gap polyfluorene derivative with isoindigo as electron-trapping moieties to improve on/off ratios. Also, possible factors which may influence the performance of polymermemory devices are investigated and feasible approaches for improving device performance are provided.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Organic semiconductor memory devices based on a low-band gap polyfluorene derivative with isoindigo as electron-trapping moieties