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Organic semiconductor memory devices based on a low-band gap polyfluorene derivative with isoindigo as electron-trapping moieties
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Polyfluorene and its derivatives are good candidates to fabricate single-component polymer memories. However, the reported polyfluorenes for use in memories all have a big band gap and exhibit an absorption peak near the ultraviolet region. We report here organic memories based on a low-band gap polyfluorene derivative with isoindigo as electron-trapping moieties to improve on/off ratios. Also, possible factors which may influence the performance of polymermemory devices are investigated and feasible approaches for improving device performance are provided.
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