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Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy
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10.1063/1.3555439
/content/aip/journal/apl/98/6/10.1063/1.3555439
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/6/10.1063/1.3555439
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic design of a GeSn p-i-n photodetector.

Image of FIG. 2.
FIG. 2.

Photocurrent-voltage characteristics for a GeSn photodetector (Sn content of 0.5%) with a radius of for three different wavelengths. The photocurrent is nearly constant at reverse voltages.

Image of FIG. 3.
FIG. 3.

Optical responsivity from up to for the GeSn p-i-n photodetector and for comparison a similar fabricated 40 GHz Ge-p-i-n photodetector (see Ref. 18) without Sn. The inset shows the optical output for the same wavelength range from the broadband super continuum laser.

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/content/aip/journal/apl/98/6/10.1063/1.3555439
2011-02-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/6/10.1063/1.3555439
10.1063/1.3555439
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