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The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing
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10.1063/1.3552967
/content/aip/journal/apl/98/7/10.1063/1.3552967
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/7/10.1063/1.3552967
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Figures

Image of FIG. 1.
FIG. 1.

(a) Density, (b) averaged diameter, and (c) aspect ratio of InAs QDs of the three samples obtained from AFM images as a function of the InAs deposition amount. Note that aspect ratio is defined as the ratio of averaged height to averaged diameter.

Image of FIG. 2.
FIG. 2.

(a) Variations of the second-order derivative RD spectra with respect to wavelength of all the 16 pieces of sample B displayed by the color contrast, in which the energies of GaAs band edge and LH related transition of WL are indicated by circles and squares, respectively. For clarity the spectra intensity in the rectangle area is magnified by five times. (b) LH transition energies for the three samples. The arrows mark the critical thicknesses for sample A, B, and C from right to left, respectively. (c) WL thickness and 3D island coverage as a function of InAs deposition amount for sample A, C, and C indicated by solid, dashed, and dotted lines, respectively.

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/content/aip/journal/apl/98/7/10.1063/1.3552967
2011-02-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/7/10.1063/1.3552967
10.1063/1.3552967
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