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Effects of controlled ambidirectional nucleation on the heteroepitaxial growth of -GaN on -sapphire
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10.1063/1.3553019
/content/aip/journal/apl/98/7/10.1063/1.3553019
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/7/10.1063/1.3553019
/content/aip/journal/apl/98/7/10.1063/1.3553019
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/content/aip/journal/apl/98/7/10.1063/1.3553019
2011-02-14
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of controlled ambidirectional nucleation on the heteroepitaxial growth of m-GaN on m-sapphire
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/7/10.1063/1.3553019
10.1063/1.3553019
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