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Effects of controlled ambidirectional nucleation on the heteroepitaxial growth of -GaN on -sapphire
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View: Figures


Image of FIG. 1.
FIG. 1.

Surface SEM images of (a) as-grown -GaN film and (b) ambidirectional islands at the initial nucleation stage. (c) Surface morphology after KOH wet-etching within the dotted line of sample (a).

Image of FIG. 2.
FIG. 2.

SEM images of -GaN films grown on various -sapphire substrates. (a) inclined toward the direction by 1°, (b) on-axis, (c)–(f) are inclined toward the direction by 1°, 2°, 3°, and 5°. The [0001] direction of GaN is marked by the black arrow and the inclined direction of -sapphire is marked by the red dotted arrow. Insets are UV microscope images for IT -GaN buffer layers prior to the growth of HT -GaN. An increase in pit density with increasing of the off-cut angle of the -sapphire is observed.

Image of FIG. 3.
FIG. 3.

X-ray diffraction rocking curve FWHMs for -GaN films as a function of off-cut angle and direction of -sapphire.

Image of FIG. 4.
FIG. 4.

(a) AFM image of -sapphire with off-cut angle of 2° toward an -plane direction after annealing and schematic illustration of the surface potential energy for an adsorbed adatom on stepped surface [13]. Schematic drawing of the -GaN crystallites grown on -sapphire substrates inclined toward the (b) direction and (c) direction of an -sapphire.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of controlled ambidirectional nucleation on the heteroepitaxial growth of m-GaN on m-sapphire