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(Left) Schematic conduction band diagram of a III-nitride based photodetector showing the lowest five minibands. Data correspond to sample B, with 1.7 nm wide AlN barriers and 2.1 nm wide GaN QWs. (Right) Simulated absorption spectra for samples B, C, and D.
Superlattice dispersion curves for samples A, B, C, and D up to the fourth miniband. The dotted lines mark the onset of the continuum.
Transmission and photovoltage spectra of a series of AlN-GaN superlattice detectors. The normalized transmission curves are hanging from the upper -axis while the photovoltage spectra stand on the lower -axis. The vertical arrows indicate calculated transition energies for sample B, taken at the higher energy side.
Photovoltages of the four samples as a function of temperature. The sample with the thinnest well, i.e., sample D, has the best performance.
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