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Intersubband spectroscopy probing higher order interminiband transitions in AlN-GaN-based superlattices
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10.1063/1.3554752
/content/aip/journal/apl/98/7/10.1063/1.3554752
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/7/10.1063/1.3554752
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Left) Schematic conduction band diagram of a III-nitride based photodetector showing the lowest five minibands. Data correspond to sample B, with 1.7 nm wide AlN barriers and 2.1 nm wide GaN QWs. (Right) Simulated absorption spectra for samples B, C, and D.

Image of FIG. 2.
FIG. 2.

Superlattice dispersion curves for samples A, B, C, and D up to the fourth miniband. The dotted lines mark the onset of the continuum.

Image of FIG. 3.
FIG. 3.

Transmission and photovoltage spectra of a series of AlN-GaN superlattice detectors. The normalized transmission curves are hanging from the upper -axis while the photovoltage spectra stand on the lower -axis. The vertical arrows indicate calculated transition energies for sample B, taken at the higher energy side.

Image of FIG. 4.
FIG. 4.

Photovoltages of the four samples as a function of temperature. The sample with the thinnest well, i.e., sample D, has the best performance.

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/content/aip/journal/apl/98/7/10.1063/1.3554752
2011-02-15
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Intersubband spectroscopy probing higher order interminiband transitions in AlN-GaN-based superlattices
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/7/10.1063/1.3554752
10.1063/1.3554752
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