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Mechanism for the direct electron injection from Al cathode to the phosphine oxide type electron transport layer
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FIG. 1.

Two device structures with no electron injection layer are shown. These are identical except for the materials for the electron transport layer. The chemical structure of SPPO21 molecule is also shown.

Image of FIG. 2.

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FIG. 2.

Current density-voltage-luminance and quantum efficiency-luminance curves of LiF free blue OLEDs with SPPO21 and as the electron transport material.

Image of FIG. 3.

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FIG. 3.

UPS data for valence band regions at various stages of ITO/SPPO21(5 nm)/Al(2 nm) formation. The arrow indicates the HOMO onset of 5.0-nm-thick SPPO21 layer. The deposition of Al on SPPO21 gradually attenuates the valence band features of SPPO21.

Image of FIG. 4.

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FIG. 4.

Energy level alignment diagram for ITO/SPPO21/Al is shown. The LUMO level of SPPO21 was deduced from the HOMO-LUMO band gap measured by CV. The electron injection barrier at SPPO21/Al interface is less than 0.1 eV.

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/content/aip/journal/apl/98/7/10.1063/1.3555443
2011-02-16
2014-04-16

Abstract

A high efficiency blue fluorescent organic light-emitting diode without LiF electron injection layer was developed. Aluminum electrode was directly deposited on a phosphine oxide type electron transport layer and the observed quantum efficiency was as high as 6.13%. The ultraviolet photoemission spectroscopy data clearly indicated that the electron injection barrier (the offset between AlFermi level and the lowest unoccupied molecular orbital of the organic layer) is less than 0.1 eV, which led us to believe that more efficient electron injection through the lower barrier is mainly responsible for the high efficiency.

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Scitation: Mechanism for the direct electron injection from Al cathode to the phosphine oxide type electron transport layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/7/10.1063/1.3555443
10.1063/1.3555443
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