1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Photo and thermal stability enhancement of amorphous Hf–In–Zn–O thin-film transistors by the modulation of back channel composition
Rent:
Rent this article for
USD
10.1063/1.3555446
/content/aip/journal/apl/98/7/10.1063/1.3555446
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/7/10.1063/1.3555446

Figures

Image of FIG. 1.
FIG. 1.

Diagram of the inverted-staggered HIZO TFT. The active layer was composed of 35 nm control composition and 5 nm modulated compositions.

Image of FIG. 2.
FIG. 2.

Transfer curves, which is measured under dark and under exposure to white light of 2000 lx luminance, (a) using the In-rich back channel and (b) using the In-poor back channel. (c) Measured mobility and value with back channel conditions.

Image of FIG. 3.
FIG. 3.

for HfInZnO TFTs annealed at 250 and with various back channel compositions.

Image of FIG. 4.
FIG. 4.

Schematic band diagram to explain the observed experimental results. The illumination induces photoexcitation of the valence band electrons into conduction band. The free electrons drift toward the back channel by the negative gate field and then flow the back channel current. Especially, the In-rich region at back channel will be more dramatically shown this phenomenon due to high mobility and high carrier concentrations.

Tables

Generic image for table
Table I.

The compositions of modulated back channel which was used in this study. To compare with the properties, 40 nm control sample was also prepared.

Loading

Article metrics loading...

/content/aip/journal/apl/98/7/10.1063/1.3555446
2011-02-16
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photo and thermal stability enhancement of amorphous Hf–In–Zn–O thin-film transistors by the modulation of back channel composition
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/7/10.1063/1.3555446
10.1063/1.3555446
SEARCH_EXPAND_ITEM