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Diagram of the inverted-staggered HIZO TFT. The active layer was composed of 35 nm control composition and 5 nm modulated compositions.
Transfer curves, which is measured under dark and under exposure to white light of 2000 lx luminance, (a) using the In-rich back channel and (b) using the In-poor back channel. (c) Measured mobility and value with back channel conditions.
for HfInZnO TFTs annealed at 250 and with various back channel compositions.
Schematic band diagram to explain the observed experimental results. The illumination induces photoexcitation of the valence band electrons into conduction band. The free electrons drift toward the back channel by the negative gate field and then flow the back channel current. Especially, the In-rich region at back channel will be more dramatically shown this phenomenon due to high mobility and high carrier concentrations.
The compositions of modulated back channel which was used in this study. To compare with the properties, 40 nm control sample was also prepared.
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