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High-Q whispering-gallery mode lasing from nanosphere-patterned GaN nanoring arrays
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10.1063/1.3556281
/content/aip/journal/apl/98/7/10.1063/1.3556281
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/7/10.1063/1.3556281
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Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram illustrating the process flow: (a) the starting LED wafer; (b) silica spheres coated on p-GaN layer; (c) pattern transfer to GaN by ICP etching; (d) shrinkage of spheres using RIE etching; (e) coating followed by liftoff; (f) removal of , giving final structure.

Image of FIG. 2.
FIG. 2.

AFM images of the hexagonal-close-packed nanoring arrays.

Image of FIG. 3.
FIG. 3.

(a) Room temperature PL spectra of nanoring array under varying excitation energy density. (b) An enlarged view of the PL spectrum near the lasing frequency. (c) PL intensity of the lasing peak at 444.075 nm as a function of pump energy density in logarithmic scale.

Image of FIG. 4.
FIG. 4.

(a) FDTD simulated transmittance plot showing resonant modes for three different cell structures; (b) strong optical coupling occurs between adjacent rings in an array.

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/content/aip/journal/apl/98/7/10.1063/1.3556281
2011-02-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-Q whispering-gallery mode lasing from nanosphere-patterned GaN nanoring arrays
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/7/10.1063/1.3556281
10.1063/1.3556281
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