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Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy
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10.1063/1.3551626
/content/aip/journal/apl/98/8/10.1063/1.3551626
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/8/10.1063/1.3551626
/content/aip/journal/apl/98/8/10.1063/1.3551626
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/content/aip/journal/apl/98/8/10.1063/1.3551626
2011-02-24
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/8/10.1063/1.3551626
10.1063/1.3551626
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