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(a) Schematic structure of (110) VCSEL, (b) cross-sectional SEM image of VCSEL, and (c) reflectance spectrum of VCSEL.
VCSEL output intensities ( and components) and as a function of excitation intensity at RT.
(a) VCSEL output intensities ( and components) and as a function of time at excitation intensity of at RT and (b) time integrated emission spectra for and components.
(a) Excitation intensity dependence of in (110) GaAs QWs at RT. (b) Simulation results for photon densities of and components and are plotted as function of time.
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