1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates
Rent:
Rent this article for
USD
10.1063/1.3556678
/content/aip/journal/apl/98/8/10.1063/1.3556678
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/8/10.1063/1.3556678
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of GaN/AlN/Si (001) template, (b) cross-sectional SEM image of a GaN/AlN/Si (001) template obtained by SAG and ELO, and (c) schematic of the multilayer structures of InGaN alloys grown on Si (111) and substrates.

Image of FIG. 2.
FIG. 2.

XRD spectra detected from different templates used for Er doped InGaN growth: (a) GaN/AlN/Si (001), (b) , and (c) GaN/AlN/Si (111).

Image of FIG. 3.
FIG. 3.

Room temperature infrared PL emission spectra near measured from grown on different templates: (a) , (b) , and (c) .

Image of FIG. 4.
FIG. 4.

XRD spectra measured from grown on different templates: (a) , (b) , and (c) .

Loading

Article metrics loading...

/content/aip/journal/apl/98/8/10.1063/1.3556678
2011-02-22
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/8/10.1063/1.3556678
10.1063/1.3556678
SEARCH_EXPAND_ITEM