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Improved germanium junction diodes formed by coimplantation of antimony and phosphorus
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10.1063/1.3558715
/content/aip/journal/apl/98/8/10.1063/1.3558715
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/8/10.1063/1.3558715
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SRP profile of the surface of n-type Ge wafer implanted by Ge.

Image of FIG. 2.
FIG. 2.

Comparison of SRP profiles of doped Ge by single P implant and coimplanted of Sb/P (Ref. 5).

Image of FIG. 3.
FIG. 3.

(a) I-V characteristics of diode formed by P implantation with different implantation energy and (b) simulated vacancy doses at region in p-Ge formed by P implantation with different energy.

Image of FIG. 4.
FIG. 4.

Comparison of I-V characteristics of diode formed by P implantation and Sb/P coimplantation (a) shallow junction formed by low implantation energy and (b) deep junction formed by high implantation energy.

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/content/aip/journal/apl/98/8/10.1063/1.3558715
2011-02-24
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved germanium n+/p junction diodes formed by coimplantation of antimony and phosphorus
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/8/10.1063/1.3558715
10.1063/1.3558715
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