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Kerr signal recorded as a function of temperature for an 8 nm thick Fe film with opposite polarizations across the structural phase transitions indicated in the lower part of the figure. In the inset an AFM topographic image of the BTO substrate.
Panel (a): coercive field of an 8 nm thick Fe film as a function of the electric field applied to the BTO; panels (b) and (c): the three components of magnetization, measured by MOKE for negative and positive electric fields applied to the BTO substrate. The measurement temperature is 250 K.
Panel (a): coercive field of an 8 nm thick Fe film as a function of the electric field applied to the BTO substrate and, in the inset, the ferroelectric hysteresis loop recorded as an electro-optic signal; panel (b): ferromagnetic hysteresis loops at different BTO bias conditions indicating the evolution of the coercive field. (c) edge and XMCD of a 3 nm Fe thick film.
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