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(a) Measured for 1.4 MeV He ion probe detection with H-S5821 diodes irradiated with focused He, Li, O, and Cl ion beams (symbols). Continuous lines are just a guide for the eye. (b) Measured normalized charge values for He probe detection with the same irradiated diodes (symbols). Continuous lines represent the least square fits of experimental values to Eq. (1).
(a) The calculated doping concentration of the pristine H-S5821 diode and the calculated electric field strength depth distribution at 100 V bias; (b) the calculated drift velocity distributions for electrons and holes ; (c) SRIM simulated vacancy production rate for selected ions and simulated LET depth profile in silicon for He probe. In all cases the thickness of surface contact and conductive layer is neglected. (d) DLTS results obtained for 1.5 MeV Si ion irradiation of low doped -type (100) silicon.
The CCE values measured during detection of 1.4 MeV He ions with four H-S5821 diodes irradiated by; (a) 1.4 MeV He, (b) 2.15 MeV Li, (c) 4 MeV O, and (d) 11 MeV Cl ions as a function of ion fluence (symbols) are shown together with the simulated values independently obtained by the IBIC model (lines) where the only variable parameter is the product.
The NIEL scaling results for the calculated equivalent displacement damage factor values [Eq. (1)], obtained from IBIC results for He ion probe detection by partially damaged silicon H-S5821diodes irradiated with the following: He ions , Li ions , O ions , and Cl ions .
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