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Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation
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10.1063/1.3559000
/content/aip/journal/apl/98/9/10.1063/1.3559000
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/9/10.1063/1.3559000
/content/aip/journal/apl/98/9/10.1063/1.3559000
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/content/aip/journal/apl/98/9/10.1063/1.3559000
2011-02-28
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Probability of divacancy trap production in silicon diodes exposed to focused ion beam irradiation
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/9/10.1063/1.3559000
10.1063/1.3559000
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