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High quality tensile-strained -doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition
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10.1063/1.3559231
/content/aip/journal/apl/98/9/10.1063/1.3559231
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/9/10.1063/1.3559231
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Conventional cross-sectional TEM observation of the sample with 9.8% In-rich buffer layer and (b) HAADF images of the interface between the InGaAs and Ge layers.

Image of FIG. 2.
FIG. 2.

(a) 004 and (b) 224 HRXRD-RSM, collected along the same azimuthal direction. The RSMs are drawn in reciprocal space coordinates.

Image of FIG. 3.
FIG. 3.

Room temperature photoluminescence spectra of three tensile-strained 50 nm thick germanium films for different indium content. The indium contents of the InGaAs buffer are indicated on the graph. The curves have been offset for clarity. The direct band gap recombination of relaxed germanium peaks at 1550 nm (not shown).

Image of FIG. 4.
FIG. 4.

Measurement of the in-plane tensile strain of the Ge films as a function of the in-plane lattice parameter of the InGaAs buffer. The diamond corresponds to XRD, the squares to Raman measurements and the triangles to photoluminescence measurements. The full line corresponds to the expected full strain transfer from the InGaAs buffer to a coherently grown Ge layer.

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/content/aip/journal/apl/98/9/10.1063/1.3559231
2011-02-28
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High quality tensile-strained n-doped germanium thin films grown on InGaAs buffer layers by metal-organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/9/10.1063/1.3559231
10.1063/1.3559231
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