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(a) Conventional cross-sectional TEM observation of the sample with 9.8% In-rich buffer layer and (b) HAADF images of the interface between the InGaAs and Ge layers.
(a) 004 and (b) 224 HRXRD-RSM, collected along the same azimuthal direction. The RSMs are drawn in reciprocal space coordinates.
Room temperature photoluminescence spectra of three tensile-strained 50 nm thick germanium films for different indium content. The indium contents of the InGaAs buffer are indicated on the graph. The curves have been offset for clarity. The direct band gap recombination of relaxed germanium peaks at 1550 nm (not shown).
Measurement of the in-plane tensile strain of the Ge films as a function of the in-plane lattice parameter of the InGaAs buffer. The diamond corresponds to XRD, the squares to Raman measurements and the triangles to photoluminescence measurements. The full line corresponds to the expected full strain transfer from the InGaAs buffer to a coherently grown Ge layer.
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