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Mid-IR transmittance at angle of incidence of (a) a mesh fabricated on a silicon substrate compared to (b) the substrateless metal mesh. Vertical lines mark the position of SPRs calculated with Eq. (1) for metal–silicon (, dashed) and metal–vacuum (, dotted-dashed) interfaces. Inset (a) electron microscope picture of the substrateless mesh. Inset (b) measurement geometry and charge distribution for symmetric and antisymmetric SP modes.
(a) Oblique to normal incidence transmittance ratio for TM and TE polarization for the substrateless mesh. In the TM spectra, the dip close to indicates resonant absorption by SPs guided on the mesh (-mode). Frequency shift as a function of incidence angle in the TM polarization, due to -mode dispersion, for both transmittance (b) and reflectivity data (c). (d) Differential transmittance (see text) of the mesh with polymer for at selected . In the inset, P-P signal vs Q-factor of the -mode.
(a) Ratio of transmittance spectra at fixed for different values of the filling factor , , and . (b) P-P signal vs refractive index variation . The dashed lines are guides to the eye.
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