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Equivalent electrical circuit of an . The initiating section is in red, the secondary sections are in blue. The value of was , and the value of was chosen to satisfy the condition: (Ref. 3).
(a) Schematics of the electrical circuit used to simulate the hotspot-plateau regime of a 30-nm-wide NbN nanowire. was the distance from the center of the nanowire. The bias resistor was . (b) Simulated time evolution of the current (, blue curve) and bias voltage (, black curve) in the circuit of (a). [(c) and (d)] Simulated time evolution of the resistivity (c) and temperature (d) profiles along the nanowire.
Simulated time evolution of the temperature and resistivity along the initiating [(a) and (b)] and secondary [(c) and (d)] sections of a 2-SNAP biased at The nanowire inductance was . The series inductance was .
(a) Simulated time evolution of the resistance of the initiating (, in red) and secondary (, in blue) sections of a 2-SNAP. (b) Simulated time evolution of the current through the initiating section (, in red), the secondary section (, in blue) and (, in black).
Experimental and simulated values of , where (switching current) is the bias current at which the device switches from the superconducting to the normal state.
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