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Electrothermal simulation of superconducting nanowire avalanche photodetectors
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10.1063/1.3560458
/content/aip/journal/apl/98/9/10.1063/1.3560458
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/9/10.1063/1.3560458

Figures

Image of FIG. 1.
FIG. 1.

Equivalent electrical circuit of an . The initiating section is in red, the secondary sections are in blue. The value of was , and the value of was chosen to satisfy the condition: (Ref. 3).

Image of FIG. 2.
FIG. 2.

(a) Schematics of the electrical circuit used to simulate the hotspot-plateau regime of a 30-nm-wide NbN nanowire. was the distance from the center of the nanowire. The bias resistor was . (b) Simulated time evolution of the current (, blue curve) and bias voltage (, black curve) in the circuit of (a). [(c) and (d)] Simulated time evolution of the resistivity (c) and temperature (d) profiles along the nanowire.

Image of FIG. 3.
FIG. 3.

Simulated time evolution of the temperature and resistivity along the initiating [(a) and (b)] and secondary [(c) and (d)] sections of a 2-SNAP biased at The nanowire inductance was . The series inductance was .

Image of FIG. 4.
FIG. 4.

(a) Simulated time evolution of the resistance of the initiating (, in red) and secondary (, in blue) sections of a 2-SNAP. (b) Simulated time evolution of the current through the initiating section (, in red), the secondary section (, in blue) and (, in black).

Tables

Generic image for table
Table I.

Experimental and simulated values of , where (switching current) is the bias current at which the device switches from the superconducting to the normal state.

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/content/aip/journal/apl/98/9/10.1063/1.3560458
2011-03-02
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrothermal simulation of superconducting nanowire avalanche photodetectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/9/10.1063/1.3560458
10.1063/1.3560458
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