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Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
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10.1063/1.3560463
/content/aip/journal/apl/98/9/10.1063/1.3560463
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/9/10.1063/1.3560463
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Id-Vg transfer characteristic curves of high-k/metal gate MOSFETs as function of stress time under (a) dc stress and (b) ac stress. The sweep was done at for both curves.

Image of FIG. 2.
FIG. 2.

(a) Cgc-Vg and (b) Cgb-Vg transfer characteristics under initial and after dynamic stress. The inset shows their respective measurement method. (c) Schematic diagram of the high-k/metal gate MOSFET and its energy-band diagram after dynamic stress.

Image of FIG. 3.
FIG. 3.

Variation in energy-band diagram cutting from (a) channel region and (b) S/D overlap region during dynamic stress.

Image of FIG. 4.
FIG. 4.

(a) Cgd-Vg and (b) Cgs-Vg transfer characteristics under initial and after dynamic stress. The inset shows their respective measurement method and illustrates the energy-band diagram after dynamic stress for a device with a floating source.

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/content/aip/journal/apl/98/9/10.1063/1.3560463
2011-03-02
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/9/10.1063/1.3560463
10.1063/1.3560463
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