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Dielectric charging in capacitive microelectromechanical system switches with silicon nitride
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10.1063/1.3560465
/content/aip/journal/apl/98/9/10.1063/1.3560465
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/9/10.1063/1.3560465
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Effect of material composition on J-V characteristic.

Image of FIG. 2.
FIG. 2.

Temperature dependence of stored charge measured in the external circuit. The straight line was drawn to show the trend of Arrhenius plots. The inset shows the TSDC spectra.

Image of FIG. 3.
FIG. 3.

Temperature dependence of bias for capacitance minimum in a MEMS capacitive switches.

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/content/aip/journal/apl/98/9/10.1063/1.3560465
2011-03-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dielectric charging in capacitive microelectromechanical system switches with silicon nitride
http://aip.metastore.ingenta.com/content/aip/journal/apl/98/9/10.1063/1.3560465
10.1063/1.3560465
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