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Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy
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10.1063/1.3607303
/content/aip/journal/apl/99/1/10.1063/1.3607303
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/1/10.1063/1.3607303
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS depth profiles of phosphorus dopant in the emitter layer of the solar cells with epi-emitters and the reference POCl3 diffused solar cell.

Image of FIG. 2.
FIG. 2.

Illuminated and pseudo current density-voltage (JV) characteristics of the solar cells with epi-emitters and the reference POCl3 diffused solar cell. The inset shows the solar cell parameters of 1 cm × 1 cm solar cells under AM 1.5G illumination.

Image of FIG. 3.
FIG. 3.

External quantum efficiencies of the solar cells with epi-emitters and the reference POCl3 diffused solar cell.

Image of FIG. 4.
FIG. 4.

HRTEM images of (a) epi-emitter grown at 700 °C and (b) epi-emitter grown at 900 °C, illustrating the quality of the emitter-substrate interface.

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/content/aip/journal/apl/99/1/10.1063/1.3607303
2011-07-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/1/10.1063/1.3607303
10.1063/1.3607303
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