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Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
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10.1063/1.3607480
/content/aip/journal/apl/99/1/10.1063/1.3607480
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/1/10.1063/1.3607480
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic diagram of a lateral three-terminal device with a CoFe/Si contact. (b) I–V characteristics measured between contacts 1 and 2 for sample A (w = 6 µm) and sample B (w = 40 µm).

Image of FIG. 2.
FIG. 2.

(Color online) The voltage changes ΔV 23 as a function of B Z at 25 K for (a) sample A and (b) sample B. The red and blue plots show ΔV 23 for I 21 = 0.1 and −0.1 µA. Schematic illustrations of spin accumulation in a Si conduction band by (c) spin extraction and (d) spin injection for I 21 > 0 and I 21 < 0, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) |ΔV 23| as a function of bias current I 21 for sample A (red) and sample B (blue) at 25 K. Left inset shows a ΔV 23B Z curve of sample B measured at I 21 = −0.3 µA. Right inset illustrates the large spin accumulation in a Si conduction band in I 21 < 0.

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/content/aip/journal/apl/99/1/10.1063/1.3607480
2011-07-08
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/1/10.1063/1.3607480
10.1063/1.3607480
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