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Polarization versus electric field (P-E) characteristics for the Al/120 nm-P(VDF-TrFE/Al/PEN capacitors. (a) strain: 0% (bending radius: ∞). (b) strain: 0.46% (bending radius: 13 mm). (c) strain: 0.69% (bending radius: 9 mm). (d) strain: 0.88% (bending radius: 7 mm).
(Color online) (a) The current density-electric field (J-E) characteristics of the Al/120 nm-P(VDF-TrFE/Al/PEN capacitors according to the bending radius. (b) J-E characteristics including the reverse current (no bending and strain: 0.88%).
(Color online) (a) The photograph and (b) photomicrograph of the fabricated Fe-TFTs, respectively. (c) Cross-sectional schematic diagram with Al/P(VDF-TrFE)/IGZO/Al/PEN structure.
(Color online) Sets of ID-VG transfer curve of (a) ID-VG transfer curve and gate leakage current, (b) ID-VG transfer curves according to the drain voltage (VD = 0.1, 1, 3 V), (c) ID-VG transfer curve with the range of the gate sweep voltage, and (d) the change of the memory window (MW) according to the gate sweep voltage for the fabricated Fe-TFTs.
(Color online) The changes of the ID and IG , which was measured at VD of 1 V and at VG of ± 20 V under different stress conditions.
Summary of the remanent polarization (Pr ) values and coercive field for the Al/120 nm-P(VDF-TrFE)/Al/PEN capacitors according to the bending radius.
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