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Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation
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10.1063/1.3608159
/content/aip/journal/apl/99/1/10.1063/1.3608159
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/1/10.1063/1.3608159
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) XRD spectra for the samples annealed at 400 and 600 °C for each implanted dose. The same intensity scale is used in each graph, for direct comparison.

Image of FIG. 2.
FIG. 2.

(Color online) (a) APs for the sample implanted at a dose of 5 × 1014 cm−2 for all the annealing temperatures, and for a reference sample without implantation. (b) I-V characteristics of the samples annealed at 600and 700 °C at 90 K. (c) Normalized APs for the samples annealed at 600 °C for each implanted dose. The APs are displayed for V = 1 V.

Image of FIG. 3.
FIG. 3.

(Color online) ToF-SIMS Si and As depth profiles for the samples annealed at 600 °C for each implanted dose.

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/content/aip/journal/apl/99/1/10.1063/1.3608159
2011-07-07
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/1/10.1063/1.3608159
10.1063/1.3608159
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