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Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures
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10.1063/1.3608162
/content/aip/journal/apl/99/1/10.1063/1.3608162
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/1/10.1063/1.3608162
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Current vs. voltage plot showing the difference in change of slope as 2DEG conduction onset in samples with 1 nm AlN (open squares) and 7.5 nm AlN thickness (open circles). It also shows the depletion region of reverse-biased schottky with increasing bias (inset). (b) V2DEG as a function of the AlN interlayer thickness.

Image of FIG. 2.
FIG. 2.

(Color online) Atomic force microscopy images of AlInN/AlN/GaN heterostructures with two different AlN spacer layer thicknesses: (a) samples with AlN = 1 nm show no formation of cracks on surface/interface; (b) samples with AlN = 7.5 nm show the presence of a relevant density of micro and nano cracks.

Image of FIG. 3.
FIG. 3.

(Color online) (a) 2DEG concentration as a function of the AlN interlayer thickness. Our data are obtained from I-V curves (solid squares) and Hall measurements (open squares) and they are compared with results form the literature, obtained with C-V (solid triangles) and Hall measurements (circles), on similar samples. The last point (7.5nm) of our I-V curve has been extrapolated (see text). The lines are plotted only for eye-guidance. (b) 2DEG Hall mobility (left axis) and sheet resistance (right axis) variation with AlN interlayer thickness.

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/content/aip/journal/apl/99/1/10.1063/1.3608162
2011-07-07
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/1/10.1063/1.3608162
10.1063/1.3608162
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