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Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
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FIG. 1.

(Color online) Id -Vg and corresponding Ib -Vg transfer characteristic curves as a function of stress time during CHCS for devices with (a) 10 Å and (b) 30 Å IL thicknesses. The inset of (b) shows the Ib -Vg curves measured by reverse mode operation (source/drain interchanged).

Image of FIG. 2.

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FIG. 2.

(Color online) ΔIGIDL versus stress time under CHCS for thin IL oxide devices with different HfO2 thicknesses. The inset shows the band diagrams before (solid line) and after (dashed line) hole capture by bulk traps.

Image of FIG. 3.

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FIG. 3.

(Color online) (a) ΔIGIDL versus stress time under various Vg stress conditions with Vd  = 3 V. The GIDL current is measured at Vd  = 2 V and Vg  = −0.5 V. Inset shows substrate current as function of Vg at Vd  = 3 V. (b) Schematic of energy band diagram of trap-assisted band-to-band hole tunneling model.

Image of FIG. 4.

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FIG. 4.

(Color online) Ib -Vg transfer characteristic curves before and after CHCS for thin IL oxide devices with (a) ground and (b) floating source terminal during stress.


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This paper investigates the channel hot carrier stress (CHCS) effects on gate-induced drain leakage (GIDL) current in high-k/metal-gate n-type metal-oxide-semiconductor field effect transistors. It was found that the behavior of GIDL current during CHCS is dependent upon the interfacial layer (IL) oxide thickness of high-k/metal-gate stacks. For a thinner IL, the GIDL current gradually decreases during CHCS, a result contrary to that found in a device with thicker IL. Based on the variation of GIDL current at different stress conditions, the trap-assisted band-to-band hole injection model is proposed to explain the different behavior of GIDL current for different IL thicknesses.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors