Full text loading...
(Color online) The XPS O 1s (a), Si 2p (b), and Hf 4f (c) core-level spectra obtained from different samples. Gaussian curve fitting is used to analyze the O 1s and Si 2p spectra.
(Color online) (a) A model to explain electronic structure of HfO2 deposited on SiO2/Si substrate. The different gate dielectric structures and internal electric fields between SiO2 and Hf silicate are formed due to different thicknesses of HfO2 layers. (b) An schematic band alignment diagram of HfO2/Hf-silicate/SiO2/Si system and its relationship with XPS binding energies.
(Color online) The corresponding capacitors data in term of their equivalent oxide thickness (EOT) and the flat band voltage (Vfb) are compared.
Summary of the binding energies of O 1s, Si 2p oxide, Si 2p sub and Hf 4f for different samples.
Article metrics loading...