1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Investigation of HfO2 high-k dielectrics electronic structure on SiO2/Si substrate by x-ray photoelectron spectroscopy
Rent:
Rent this article for
USD
10.1063/1.3609233
/content/aip/journal/apl/99/1/10.1063/1.3609233
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/1/10.1063/1.3609233

Figures

Image of FIG. 1.
FIG. 1.

(Color online) The XPS O 1s (a), Si 2p (b), and Hf 4f (c) core-level spectra obtained from different samples. Gaussian curve fitting is used to analyze the O 1s and Si 2p spectra.

Image of FIG. 2.
FIG. 2.

(Color online) (a) A model to explain electronic structure of HfO2 deposited on SiO2/Si substrate. The different gate dielectric structures and internal electric fields between SiO2 and Hf silicate are formed due to different thicknesses of HfO2 layers. (b) An schematic band alignment diagram of HfO2/Hf-silicate/SiO2/Si system and its relationship with XPS binding energies.

Image of FIG. 3.
FIG. 3.

(Color online) The corresponding capacitors data in term of their equivalent oxide thickness (EOT) and the flat band voltage (Vfb) are compared.

Tables

Generic image for table
Table I.

Summary of the binding energies of O 1s, Si 2p oxide, Si 2p sub and Hf 4f for different samples.

Loading

Article metrics loading...

/content/aip/journal/apl/99/1/10.1063/1.3609233
2011-07-07
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of HfO2 high-k dielectrics electronic structure on SiO2/Si substrate by x-ray photoelectron spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/1/10.1063/1.3609233
10.1063/1.3609233
SEARCH_EXPAND_ITEM