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Electrical measurement of non-destructively p-type doped graphene using molybdenum trioxide
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10.1063/1.3609318
/content/aip/journal/apl/99/1/10.1063/1.3609318
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/1/10.1063/1.3609318
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic illustration of graphene device layout with deposition of MoO3 thin film (b) Raman spectra of graphene sample after scratch and after device fabrication and MoO3 modification.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Quantum Hall effect and SdH oscillation of MoO3 modified graphene (b) Hall resistance measured at 2 K before and after MoO3 modification.

Image of FIG. 3.
FIG. 3.

(Color online) UPS spectra at the low-kinetic energy part for (a) pristine CVD graphene, (b) after MoO3 deposition in UHV condition, and (c) after air exposure of MoO3 modified graphene for 2 h.

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/content/aip/journal/apl/99/1/10.1063/1.3609318
2011-07-08
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical measurement of non-destructively p-type doped graphene using molybdenum trioxide
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/1/10.1063/1.3609318
10.1063/1.3609318
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