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(Color online) I-V characteristics of Schottky diode with different S doses (cm−2) for 2 × 1015 cm−3 Si, and 5 × 1017 cm−3 Si with no S implant. Reverse current increases with S dose.
(Color online) (a) Arrhenius plot and (b) SBH as a function of temperature, extracted under 0.5 V reverse bias for different S doses (cm−2) and Si dopant densities (cm−3). A calculation based on TFE equation with dopant density 3 × 1018 cm−3 is also shown for comparison.
(Color online) (a) Capacitance-voltage (C-V) measurement and (b) internal photoemission measurements for the Schottky diodes with Si dopant density 2 × 1015 cm−3. The extracted SBH is shown in Table I. SBH is not a strong function of S dose. SBH is extracted by fitting the IPE data from 0.70 eV to 0.90 eV, the 95% confident levels are also shown.
(Color online) (a) A SIMS depth profile of S-implanted NiSi/Si which shows S concentrations of ∼1018–1020 cm−3 at the NiSi/Si interface (defined at the depth value corresponding to 50% of the rise in Si concentration signal). (b) Time-of-flight SIMS shows the prevalence of Si-S− clusters, but not Ni-S+ or NiSi-S+ clusters at a S dose of 3 × 1014 cm−2.
SBH measured with different techniques.
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