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Excitonic parameters of GaN studied by time-of-flight spectroscopy
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Image of FIG. 1.
FIG. 1.

(Color online) (a) Delay time dependencies obtained using (1) 2L pulse reflexes in the 1-mm sample; (2) basic pulses transmitted through the same sample, multiplied by two; and (3) basic pulses in the 2-mm sample. The inset shows the scheme of the back-scattering and transmission measurements, where n·L denotes the series of replicas. (b), (c) Experimental spectra of reflectivity (b) and transmission (c) measured in the 1-mm sample. The thin red lines are simulated spectra calculated as described in the text.

Image of FIG. 2.
FIG. 2.

(Color online) Selected TR images of replicas of impinging pulses at different energies, recorded in the back-scattering configuration. The delay time dependencies calculated for the 2L and 4L reflexes are plotted over these images. The extra curve in (d) is the delay time dependence calculated neglecting the D0X resonances. The inset shows the contour of the transmitted pulse with ΔD0 X assumed to be (1) 0.035 meV and (2) 0.1 meV.


Generic image for table
Table I.

Summary of exciton-polariton parameters of bulk hexagonal GaN derived from cw and TR transmission data, shown together with reported data obtained by a reflectivity technique. The accuracy is 0.3 meV for the energies, being within ±10% limits for other parameters.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excitonic parameters of GaN studied by time-of-flight spectroscopy