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Dielectric dipole mitigated Schottky barrier height tuning using atomic layer deposited aluminum oxide for contact resistance reduction
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10.1063/1.3633117
/content/aip/journal/apl/99/10/10.1063/1.3633117
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/10/10.1063/1.3633117
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Cross sectional schematic of diodes investigated in this study. (b) Cross sectional TEM of a diode showing the AlO x -B/IFL-SiO2 interface.

Image of FIG. 2.
FIG. 2.

(Color online) Summary of I-V data for diodes. (a) TaN only control diode. (b) AlO x -A/IFL-SiO2 diode. (c) AlO x -B/Chem-SiO2 diode. (d) AlO x -C/ALD-SiO2 diode. The forward current shows tunneling characteristics caused by the thicker dielectric and is not a useful contact.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Richardson plot of reverse bias current versus temperature used for Φ SBH extraction. (b) Summary of measured Φ SBH from all diodes investigated. Large changes in Φ SBH are possible, but tunneling resistance becomes severe for all AlO x -C recipes.

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/content/aip/journal/apl/99/10/10.1063/1.3633117
2011-09-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dielectric dipole mitigated Schottky barrier height tuning using atomic layer deposited aluminum oxide for contact resistance reduction
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/10/10.1063/1.3633117
10.1063/1.3633117
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