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Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB
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10.1063/1.3634026
/content/aip/journal/apl/99/10/10.1063/1.3634026
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/10/10.1063/1.3634026
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) TMR vs. top CoFeB layer thickness after annealed at 300 °C for 40 min and 80 min using a CTA system.

Image of FIG. 2.
FIG. 2.

TMR curves of the p-MTJ after annealed for different amount of time at 340 °C.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Evolution of TMR, RP, and RAP for the p-MTJ showing in Figure 2. (b) Evolution of coercivity for top (black square) and bottom (red dot) electrodes in the same junction and the evolution of anisotropy field (blue triangle) for the top CoFeB film measured by VSM. Inset shows the AHE measurement of the bottom electrode on a patterned Hall bar after annealing for different time durations.

Image of FIG. 4.
FIG. 4.

(Color online) Evolution of TMR with annealing time at different temperatures, by either a RTA or CTA process. Inset shows 117% TMR from one of the MTJs.

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/content/aip/journal/apl/99/10/10.1063/1.3634026
2011-09-06
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/10/10.1063/1.3634026
10.1063/1.3634026
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