1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm
Rent:
Rent this article for
USD
10.1063/1.3634029
/content/aip/journal/apl/99/10/10.1063/1.3634029
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/10/10.1063/1.3634029
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional HAADF STEM images of QDs formed from depositing 1.65 ML of InAs in a InGaAsP matrix and capped with: (a) InGaAsP and (b) 1.7 ML of GaAs followed by InGaAsP. (c) and (d) Plan-view HAADF STEM images of the QDs in samples (a) and (b), respectively.

Image of FIG. 2.
FIG. 2.

The RT spectra of QDs capped with 1.7 ML of GaAs. Inset shows dependence of the QD PL peak position at RT on the thickness of the overgrown GaAs layer.

Image of FIG. 3.
FIG. 3.

CW light-current (solid squares) and voltage-current (open squares) characteristic of a 2 μm wide ridge QD laser (L = 4 mm) at 20 °C heat sink temperature. Inset shows corresponding EL and CW lasing spectra.

Loading

Article metrics loading...

/content/aip/journal/apl/99/10/10.1063/1.3634029
2011-09-08
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/10/10.1063/1.3634029
10.1063/1.3634029
SEARCH_EXPAND_ITEM