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Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence
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10.1063/1.3634046
/content/aip/journal/apl/99/10/10.1063/1.3634046
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/10/10.1063/1.3634046
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) PL signal intensity and (b) BS of PL as a function of annealing time (T ann = 750 °C) for SiO2 and SiNx capped samples. The inset shows a typical PL spectrum.

Image of FIG. 2.
FIG. 2.

Ga 3d spectra for the SiO2- and SiNx-capped samples.

Image of FIG. 3.
FIG. 3.

Highly surface sensitive Ga 2p 3/2 spectrum measured from the SiO2-capped, 1000 s annealed sample.

Image of FIG. 4.
FIG. 4.

As 3d spectra for the SiO2- and SiNx-capped samples. Solid lines (dot lines) show the 3d 5/2 (3d 3/2) peaks of the doublet components.

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/content/aip/journal/apl/99/10/10.1063/1.3634046
2011-09-08
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/10/10.1063/1.3634046
10.1063/1.3634046
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