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Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence
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10.1063/1.3634046
/content/aip/journal/apl/99/10/10.1063/1.3634046
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/10/10.1063/1.3634046
/content/aip/journal/apl/99/10/10.1063/1.3634046
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/content/aip/journal/apl/99/10/10.1063/1.3634046
2011-09-08
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/10/10.1063/1.3634046
10.1063/1.3634046
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