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PN junction rectification in electrolyte gated Mg-doped InN
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) Schematic of the InN device and (b) gate-drain I-V characteristics of the barrier created by the ionic liquid in contact with the InN. Negligible current flow is observed for ±1 V. Inset shows chemical formula of the ionic liquid [EMIM]-[TFSI] molecule used as the gate.

Image of FIG. 2.
FIG. 2.

(Color online) Source-drain I-V data as a function of gate voltage for undoped n-type (a) and Mg-doped (b) InN films on Sapphire substrates. As discussed in the text, non-linear I-V curves are observed for the p-type case under negative gate voltage due to np junction rectification.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Equivalent circuit representation of the experimental set up. The SEA is shown as the darker shaded region. (b) Effect of increasing the electron concentration at the surface. (c) Effect of depleting the surface electron accumulation in the vicinity of the drain contact. (d) Calculated I-V curves for different values of R N, the resistance of the surface/interface layer. Larger values of R N increase the current going through the p-type layer, shown as line in (c), and produce non-linear I-V curves in agreement with experiment.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: PN junction rectification in electrolyte gated Mg-doped InN