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High-efficiency graded band-gap AlxGa1−xAs/GaAs photocathodes grown by metalorganic chemical vapor deposition
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10.1063/1.3635401
/content/aip/journal/apl/99/10/10.1063/1.3635401
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/10/10.1063/1.3635401
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the t-mode sample structure and (b) schematic drawing of the graded band-gap structure.

Image of FIG. 2.
FIG. 2.

ECV profiling of carrier concentration in the graded band-gap sample grown by MOCVD.

Image of FIG. 3.
FIG. 3.

Cross sectional SEM photograph of the graded band-gap sample grown by MOCVD.

Image of FIG. 4.
FIG. 4.

(Color online) Experimental quantum yield curves of the two different t-mode photocathodes.

Image of FIG. 5.
FIG. 5.

(Color online) Experimental quantum yield curves of the two different r-mode photocathodes.

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/content/aip/journal/apl/99/10/10.1063/1.3635401
2011-09-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-efficiency graded band-gap AlxGa1−xAs/GaAs photocathodes grown by metalorganic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/10/10.1063/1.3635401
10.1063/1.3635401
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