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Amorphous interface layer in thin graphite films grown on the carbon face of SiC
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10.1063/1.3635786
/content/aip/journal/apl/99/10/10.1063/1.3635786
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/10/10.1063/1.3635786
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Figures

Image of FIG. 1.
FIG. 1.

(a) High resolution TEM image of a typical region of the C-face 4H-SiC and graphite film interface containing an amorphous intermediate layer, grown at 1600 °C and 50 mbar of Ar. The graphite film is ∼6.8 nm thick, while the amorphous layer is ∼10 Å (the exact thickness is obscured by delocalization of the adjacent crystalline layers). (b) TEM image of another typical region grown at 1600 °C in vacuum, with a far thicker graphite film (∼21 nm), yet a thinner amorphous layer (∼5 Å). The slightly mottled contrast is a product of ion and electron beam damage, especially prominent in the extremely beam-damage sensitive graphite. Both images were acquired in the SiC- direction.

Image of FIG. 2.
FIG. 2.

(Color online) (a) ADF-STEM image of a typical region of a graphite film grown on C-face 4H-SiC at 1600 °C and 1 mbar of Ar containing an amorphous intermediate layer. Imaged from the direction, the (0001) lattice planes of both the substrate and graphite film are visible, but absent in the amorphous layer. (b) Higher angle ADF-STEM image, with Z-like contrast, averaged across to reduce noise (the width of the included image is arbitrary). (c) EELS collected locally (using the STEM probe) from each of the three regions shows that the amorphous layer contains both Si and C, with a ∼1:4 of Si:C, in rough agreement with conclusions drawn from the contrast in (b). The spectra are vertically offset from each other for clarity, along a log-scale vertical axis in units of arbitrary intensity.

Image of FIG. 3.
FIG. 3.

Cross-sectional TEM image of one of the characteristic ridges observed in graphite grown on C-face SiC. The amorphous Si/C layer continues beneath the ridge and is distinct from the amorphous carbon material that has collected beneath the ridge as a result of sample preparation. Image acquired in the SiC- direction.

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/content/aip/journal/apl/99/10/10.1063/1.3635786
2011-09-07
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Amorphous interface layer in thin graphite films grown on the carbon face of SiC
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/10/10.1063/1.3635786
10.1063/1.3635786
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