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Spin-dependent electron transport in waveguide with continuous shape
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10.1063/1.3636410
/content/aip/journal/apl/99/11/10.1063/1.3636410
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3636410
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic diagram of waveguide with continuous shape, which experiences the constriction around x = 0 and tends to a constant w 0 asymptotically. The corresponding spin-split energy bands are shown in the lower panel, demonstrating that the effective potential is strongly spin-dependent.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Dependence of E (solid), E + (dotted), and Eb (dashed) on r. The waveguide is a repulsive potential, where a = 3, L = 0.5, w 1 = 1/5, and the strength of SOC is α = 0.01, as typical for GaAs-based structures. (b-d) Three main transmissions Tδδ versus r with different boundaries, L = 0.5 (b), L = 0.25 (c), L = 0.1 (d), where δ and δ represent the incidence and transmission channels. The increase in T at r close to one is due to the almost resonant tunneling in this channel at these values of r (cf. Fig. 1).

Image of FIG. 3.
FIG. 3.

(Color online) Cosine of the spin angle θ as a function of x coordinate, with the incidence energies E + (solid line, spin +) and E (dashed line, spin −), given by k = 4.35 and r = 0.8. Other parameters are the same as those in Fig. 2(a).

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/content/aip/journal/apl/99/11/10.1063/1.3636410
2011-09-12
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spin-dependent electron transport in waveguide with continuous shape
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3636410
10.1063/1.3636410
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