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Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers
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10.1063/1.3637599
/content/aip/journal/apl/99/11/10.1063/1.3637599
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3637599

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Light output power and (b) ESD properties of sample A and B.

Image of FIG. 2.
FIG. 2.

(Color online) Measured C-V characteristics of sample A and B.

Image of FIG. 3.
FIG. 3.

(Color online) IR camera images of (a) sample A and (b) sample B driven by 350-mA injection current.

Image of FIG. 4.
FIG. 4.

(Color online) I-V characteristics of sample A and B with absolute current values.

Image of FIG. 5.
FIG. 5.

(Color online) (a) XRD (004) ω/2θ scan patterns of sample A and B. (b) Typical RT-PL spectra of sample A and B. (c) AFM images of the etched surfaces of sample A (left) and B (right) over the 10 × 10 μm2 scan area.

Tables

Generic image for table
Table I.

XRD data extracted from the rocking curves and (004) ω/2θ scan patterns.

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/content/aip/journal/apl/99/11/10.1063/1.3637599
2011-09-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced electrostatic discharge properties of nitride-based light-emitting diodes with inserting Si-delta-doped layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3637599
10.1063/1.3637599
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