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Controlled oxygen vacancy induced p-type conductivity in HfO2− x thin films
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Energy gap of oxygen engineered HfO2− x derived from optical spectroscopy as a function of oxygen flow rate. The maximum corresponds to x = 0, the positive slope part corresponds to reduced HfO2− x with x > 0 (low oxidation conditions). The negative slope part is associated with the formation of Hf vacancies and oxygen interstitials (high oxidation conditions). The resistivity of the heavily reduced samples left of the dash-dotted line is shown in Fig. 2.

Image of FIG. 2.
FIG. 2.

(Color online) Room-temperature resistivity of HfO2− x as a function of oxygen flow rate. Inset: photo of the reflection of a white light bulb from the surface of equally thin films of HfO2− x on c-cut sapphire substrates. (a) Transparent HfO2 film (2.0 sccm O2), (b) greyish HfO2− x film (1.0 sccm), (c) black HfO2− x film, golden shine (0.3 sccm) and (d) Hf metal thin film, silvery, metallic shine (no oxygen flow).

Image of FIG. 3.
FIG. 3.

HRTEM images of a conducting HfO2− x thin film. The upper inset reveals a micro-diffraction pattern confirming (i) the textured nature of the thin film and (ii) the formation of HfO2− x in contrast to metallic Hf. The enlarged inverse Fourier-transformed images shown in the lower image represent the lattice periodicity of one individual grain.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlled oxygen vacancy induced p-type conductivity in HfO2−x thin films