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Metal-insulator transition in low dimensional La0.75Sr0.25VO3 thin films
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10.1063/1.3638065
/content/aip/journal/apl/99/11/10.1063/1.3638065
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3638065
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Typical RHEED intensity oscillations during deposition for LSVO films with different thickness. The AFM topography image of LSVO films with 8 uc thickness is shown in the inset.

Image of FIG. 2.
FIG. 2.

(Color online) (a) XRD patterns (2θ-ω scans) for LSVO films with different thickness, (b) the variation of the c-axis lattice parameter with thickness, and (c) the reciprocal space mapping for LSVO film with 25 uc thickness.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Temperature-dependent electrical resistivity of LSVO films with different thickness. The arrows indicate a thickness dependent characteristic temperature (TMI) and (b) resistivity vs. T2 using the Fermi liquid model in the metallic region for films with 8–25 uc thickness.

Image of FIG. 4.
FIG. 4.

(Color online) O1s edge XAS taken at normal incidence for different film thickness. Details of the V 3d t 2 g band for films with 5 and 8 uc thickness taken at normal (lower inset) and grazing (upper inset) incidence.

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/content/aip/journal/apl/99/11/10.1063/1.3638065
2011-09-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Metal-insulator transition in low dimensional La0.75Sr0.25VO3 thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3638065
10.1063/1.3638065
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