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Graphitization of n-type polycrystalline silicon carbide for on-chip supercapacitor application
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) Microfabrication process flow, (b) SEM (LEO 1550 scanning electron microscope) images of (a) the planar micro-supercapacitor structure, and (c) close up view of GC layer.

Image of FIG. 2.
FIG. 2.

(Color online) Raman spectra of NiTi-induced graphitization of n-type polySiC. The NiTi thicknesses are 50, 100, and 200 nm for (a), (b), and (c), respectively. Data were collected at laser excitation wavelength of 633 nm.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Cross sectional image of the structure schematically shown in Fig. 1; (b) Percent atomic concentration based on scanning Auger integrated intensities for Si, C, O, and N species in the four locations identified in (a).

Image of FIG. 4.
FIG. 4.

(Color online) CV curves obtained on poly-SiC (dash line) and 200 nm NiTi graphitized poly-SiC (solid line), in 1 M H2SO4. Scan rate was set at 50 mV/s.

Image of FIG. 5.
FIG. 5.

(Color online) Charge-discharge curves. Black curve corresponds to the first 5 cycles and red curve corresponds to the last 5 cycles from a total of 200 cycles. The device is charged and discharged under a square-wave toggling between 0.5 and 0 V at a period of 0.4 s.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Graphitization of n-type polycrystalline silicon carbide for on-chip supercapacitor application