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Carrier concentration profiles determined by C-V measurements with a probe frequency of 1 MHz after polishing (sample A1) and after subsequent etching in 2% HF solution (sample A2).
(Color online) Measured (symbols) and fitted (dash line) DLTS spectra from samples A1, A2 and an as-grown sample not subjected to polishing/etching (solid line), using rate windows of (640 ms−1) and (3200 ms−1) in the temperature range of 80 K-300 K and 300 K-600 K, respectively. The inset shows a magnification of the DLTS spectra of the A2 and as-grown samples.
(Color online) DLTS spectra of sample A1 (a) and sample A2 (b) for different contacts, measured in consecutive order on the same sample.
Survey of the energy position and apparent capture cross section for E5 and E6 after etching (sample A2). The values are deduced from Arrhenius plots of the electron emission rates.
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