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Electronic properties of vacancy related defects in ZnO induced by mechanical polishing
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10.1063/1.3638470
/content/aip/journal/apl/99/11/10.1063/1.3638470
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3638470

Figures

Image of FIG. 1.
FIG. 1.

Carrier concentration profiles determined by C-V measurements with a probe frequency of 1 MHz after polishing (sample A1) and after subsequent etching in 2% HF solution (sample A2).

Image of FIG. 2.
FIG. 2.

(Color online) Measured (symbols) and fitted (dash line) DLTS spectra from samples A1, A2 and an as-grown sample not subjected to polishing/etching (solid line), using rate windows of (640 ms−1) and (3200 ms−1) in the temperature range of 80 K-300 K and 300 K-600 K, respectively. The inset shows a magnification of the DLTS spectra of the A2 and as-grown samples.

Image of FIG. 3.
FIG. 3.

(Color online) DLTS spectra of sample A1 (a) and sample A2 (b) for different contacts, measured in consecutive order on the same sample.

Tables

Generic image for table
Table I.

Survey of the energy position and apparent capture cross section for E5 and E6 after etching (sample A2). The values are deduced from Arrhenius plots of the electron emission rates.

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/content/aip/journal/apl/99/11/10.1063/1.3638470
2011-09-15
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic properties of vacancy related defects in ZnO induced by mechanical polishing
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3638470
10.1063/1.3638470
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