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III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation
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10.1063/1.3638474
/content/aip/journal/apl/99/11/10.1063/1.3638474
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3638474
/content/aip/journal/apl/99/11/10.1063/1.3638474
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/content/aip/journal/apl/99/11/10.1063/1.3638474
2011-09-15
2014-12-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: III-V-on-nothing metal-oxide-semiconductor field-effect transistors enabled by top-down nanowire release process: Experiment and simulation
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3638474
10.1063/1.3638474
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