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Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p–i–n GaAs solar cells
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10.1063/1.3638488
/content/aip/journal/apl/99/11/10.1063/1.3638488
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3638488
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) PC spectra at 300 K under a xenon lamp. Inset: relative PC intensities. Sample A: InAs QDs in the i region; B: QDs in the n region; C: without QDs.

Image of FIG. 2.
FIG. 2.

(Color online) (a) PC spectra at 300 K under a quartz-halogen tungsten lamp. (b) GaAs-filtered PC spectra. 1–7 mark optical absorptions ofQDs.

Image of FIG. 3.
FIG. 3.

(a) Reduced electron mobility by QD induced potential variation. (b) Difficulty to extract photocarriers from low-energy QD level.

Image of FIG. 4.
FIG. 4.

(Color online) Wave functions of CB electron and VB hole with a transition energy ℏω = 1.593 eV (above the GaAs bandgap). Also presented are the schematic CB and VB of GaAs embedded with InAs QDs modelled as one-dimensional QWs.

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/content/aip/journal/apl/99/11/10.1063/1.3638488
2011-09-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p–i–n GaAs solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/99/11/10.1063/1.3638488
10.1063/1.3638488
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